| 摘要 |
A nitride semiconductor device according to one embodiment of the present invention comprises: a non-doped first aluminum gallium nitride (Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N (0<=x<=1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gallium nitride (Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N (0<=x<=1,x<y)) layer which is formed on the first aluminum gallium nitride layer as a barrier layer; an aluminum nitride (AlN) film which is formed on the second aluminum gallium nitride layer as a gate insulating film lower layer; an aluminum oxide (Al<SUB>2</SUB>O<SUB>3</SUB>) film which is formed on the aluminum nitride film as a gate insulating film upper layer; a source electrode and a drain electrode which are formed as first and second main electrodes to be electrically connected to the second aluminum gallium nitride layer, respectively; and a gate electrode which is formed on the aluminum oxide film as a control electrode.
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