| 发明名称 |
Silicon wafer etching process and composition |
| 摘要 |
A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
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| 申请公布号 |
US2006011588(A1) |
申请公布日期 |
2006.01.19 |
| 申请号 |
US20050152362 |
申请日期 |
2005.06.14 |
| 申请人 |
STINSON MARK G;ERK HENRY F;ZHANG GUOQIANG;BJELOPAVLIC MICK;GRABBE ALEXIS;VERMEIRE JOZEF G;SCHMIDT JUDITH A;DOANE THOMAS E;CAPSTICK JAMES R |
发明人 |
STINSON MARK G.;ERK HENRY F.;ZHANG GUOQIANG (.;BJELOPAVLIC MICK;GRABBE ALEXIS;VERMEIRE JOZEF G.;SCHMIDT JUDITH A.;DOANE THOMAS E.;CAPSTICK JAMES R. |
| 分类号 |
B44C1/22;C09K13/02;H01L21/306 |
主分类号 |
B44C1/22 |
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