| 摘要 |
<p>The present invention relates generally to area of technical physics and, more particularly, can be used mainly in areas, where it is necessary to provide influence of structured electromagnetic field on various physical, chemical, and biological processes, for example, getting thin nanodimension films with a fractal structure, protection of biological objects against harmful influence of electromagnetic field of technogenic character, and so on. The technical result of the invention is the expansion of spatial area of structured field localization. The technical result is achieved due to the fact that upon a substrate made of dielectric material and/or semiconductor and/or metal (metal-insulator-semiconductor structure) a fractal topology is formed, which structure includes a fractal topology with a level of fractalization M not less than three, formed as follows: into structure of the first level fractalization module the 1+N circles of radius R enter, the center of N circles each being located on the first circle, forming a central-symmetric figure, and a circle of radius 2R, which center coincides with center of the first circle, envelopes the N circles of radius R, the points of contact of circle of radius 2R with circles of radius R being the centers of layout of the first level fractalization modules, which are enveloped with a circle of radius 4R at the construction of the second level module, and further topology is fractalized in the same way; the fractal topology on the substrate is formed using slits which width and depth are not less than 0,1 microns.</p> |
