METHOD FOR PT LAYER ETCHING USING MERIE EQUIPMENT HAVING DUAL RF POWER,申请号KR19980014237-传众专利搜索

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发明名称	METHOD FOR PT LAYER ETCHING USING MERIE EQUIPMENT HAVING DUAL RF POWER
摘要
申请公布号	KR100546273(B1)	申请公布日期	2006.01.19
申请号	KR19980014237	申请日期	1998.04.21
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, HYEON U;JU, BYEONG SEON;KANG, CHANG JIN;MUN, JU TAE
分类号	H01L21/3065	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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