METHOD OF MANUFACTURING A THIN LAYER USING ATOMIC LAYER DEPOSITION, AND METHOD OF MANUFACTURING A GATE STRUCTURE AND A CAPACITOR USING THE SAME,申请号KR20040055057-传众专利搜索

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发明名称	METHOD OF MANUFACTURING A THIN LAYER USING ATOMIC LAYER DEPOSITION, AND METHOD OF MANUFACTURING A GATE STRUCTURE AND A CAPACITOR USING THE SAME
摘要
申请公布号	KR20060006168(A)	申请公布日期	2006.01.19
申请号	KR20040055057	申请日期	2004.07.15
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	PARK, HONG BAE;KANG, SANG BOM;JIN, BEOM JUN;SHIN, YU GYUN
分类号	H01L21/20;H01L21/336;H01L21/8242	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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