发明名称 |
LAMINATED SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To prevent the reduction of yield due to defective penetrated wiring in a laminated semiconductor device that is formed by stacking a plurality of semiconductor chips and uses wiring penetrating through the semiconductor chips to establish electric connection among the semiconductor chips. SOLUTION: The laminated semiconductor device includes penetrated wirings 205 and 209 penetrating through semiconductor chips 204 and 213. In this case, spare penetrated wirings 206 and 210 are arranged parallel to the penetrated wirings 205 and 209, and switch circuits 203, 207 and 211 are used to change over the transmittance route of a signal to the penetrated wiring or the spare penetrated wiring. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006019328(A) |
申请公布日期 |
2006.01.19 |
申请号 |
JP20040192763 |
申请日期 |
2004.06.30 |
申请人 |
NEC CORP;ELPIDA MEMORY INC |
发明人 |
FUKAISHI MUNEO;SAITO HIDEAKI;HAGIWARA YASUHIKO;MIZUNO MASAYUKI;IKEDA HIROAKI;SHIBATA KAYOKO |
分类号 |
H01L25/18;H01L21/3205;H01L21/822;H01L23/52;H01L25/065;H01L25/07;H01L27/00;H01L27/04 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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