发明名称 |
Solid state imaging device and method of manufacturing the same |
摘要 |
A solid-state imaging device including a photoelectric conversion portion and a charge transfer portion equipped with charge transfer electrodes to transfer the charge generated in the photoelectric conversion portion, wherein the charge transfer portion is provided with a charge transfer electrodes having a first electrode including a first layer electric conductive film, and a second electrode having a second layer electric conductive film provided contiguously to the first electrode with an electrode insulating film therebetween, and the first electrode is coated with a silicon oxide film that is the electrode insulating film formed by side wall oxidation in the state that the upside is coated with an antioxidizing film so as to coat the side wall.
|
申请公布号 |
US2006011953(A1) |
申请公布日期 |
2006.01.19 |
申请号 |
US20050159367 |
申请日期 |
2005.06.23 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
NAKAHASHI YOUSUKE;TAKAO HIROAKI;SHIZUKUISHI MAKOTO |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|