发明名称 |
Semiconductor structure including silicide regions and method of making same |
摘要 |
A method of forming a silicided gate on a substrate having active regions, comprising the steps of: forming a first silicide in the active regions from a first material; and forming a second silicide in the gate from a second material, wherein the first silicide forms a barrier against the second material forming a silicide in the active regions during the second silicide forming step, wherein said second silicide is thicker than said first silicide.
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申请公布号 |
US2006011996(A1) |
申请公布日期 |
2006.01.19 |
申请号 |
US20040892915 |
申请日期 |
2004.07.16 |
申请人 |
WU CHII-MING;LIN CHENG-TUNG;WANG MEI-YUN;CHANG CHIH-WEI;SHUE SHAU-LIN |
发明人 |
WU CHII-MING;LIN CHENG-TUNG;WANG MEI-YUN;CHANG CHIH-WEI;SHUE SHAU-LIN |
分类号 |
H01L21/336;H01L21/28;H01L21/3205;H01L21/44;H01L21/4763;H01L29/45;H01L29/49;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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