发明名称 Manufacturing method of semiconductor device and manufacturing method of lead frame
摘要 Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
申请公布号 US2006014321(A1) 申请公布日期 2006.01.19
申请号 US20050181929 申请日期 2005.07.15
申请人 发明人 ITO FUJIO;SUZUKI HIROMICHI;KAMEOKA AKIHIKO;KUSUKAWA JUNPEI;TAKEZAWA YOSHITAKA
分类号 H01L21/50 主分类号 H01L21/50
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