| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element with high luminescence intensity employing β-FeSi<SB>2</SB>. <P>SOLUTION: The light emitting element 10 has a β-FeSi<SB>2</SB>film 12 provided on an Si substrate 11 and an Si cap layer 13 provided on the β-FeSi<SB>2</SB>film 12. A lower electrode 14 is provided on the rear 11b of the substrate 11, and an upper electrode 15 is provided on the surface 13a of the Si cap layer 13, respectively. The β-FeSi<SB>2</SB>film 12 has the same conductivity as that of the Si substrate. The Si cap layer 13 has different conductivity from that of the β-FeSi<SB>2</SB>film 12. The light emitting element thus constituted has high luminescence intensity. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
