发明名称 |
CHARGED PARTICLE BEAM ALIGNER, METHOD FOR EXPOSING CHARGED BEAM AND METHOD FOR MANUFACTURING DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To expose without degrading a throughput without the need of another lithography even if a failure occurs on part of a plurality of beams. <P>SOLUTION: A charged particle beam aligner includes a charged particle beam source 1, a charged particle beam lens 2, charged particle beam deflectors 5 and 6, and a split means 3 for splitting a charged particle beam generated from the beam source into a plurality of beams 16. The aligner further includes a means using an alternative beam to transfer a desired pattern onto a wafer 14 when a predetermined beam among the plurality of beams cannot be transferred onto the wafer 14 to be exposed, for transferring the plurality of split and shaped beams onto the wafer 14. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006019436(A) |
申请公布日期 |
2006.01.19 |
申请号 |
JP20040194771 |
申请日期 |
2004.06.30 |
申请人 |
CANON INC;HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
SOMETA YASUHIRO;TANIMOTO AKIYOSHI |
分类号 |
H01L21/027;G03F7/20;H01J37/305 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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