| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which reduces the number of control terminals required for switching through paths of a high frequency signal, simplifies the circuit configuration for controlling the terminals, improves an isolation characteristic between on path and off path of a through FET, and obtains a sufficiently high isolation. SOLUTION: In this semiconductor apparatus, one specific through FET 7-c and each 7-a, 7-c of shunt FETs 7-a, 6-a, 5-b, 7-b connected to each of through FETs 5-a, 6-b other than the one specific through FET 7-c are simultaneously turned on in response to the same control signal inputted to the same control terminal 7. Thus, when a high frequency signal leaks from an output terminal RF2, RF3 to the signal path of the through FET 7-c having been turned on, through the signal paths of the through FETs 5-a, 6-b having been turned off, the high frequency signal is released to GND 8, 9 through the shunt FET 7-a, 7-b having been turned on. COPYRIGHT: (C)2006,JPO&NCIPI
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