摘要 |
PROBLEM TO BE SOLVED: To make electric charge which leaks from a photoelectric conversion element of each pixel small and to make the difference of leak amounts of electric charge from the photoelectric conversion elements between pixels small in a solid imaging device using CMOS image sensors. SOLUTION: An end of a TG signal line 6 to which a transistor 2 for transfer of pixels P<SB>j1</SB>, P<SB>jn</SB>of the same column is connected, is connected to a driver D<SB>j</SB>, and another end is connected to a holding circuit H<SB>j</SB>. The holding circuit H<SB>j</SB>shorts another end of the TG signal line 6 with ground potential when a transistor 4 for selection of pixels P<SB>j1</SB>, P<SB>jn</SB>of the same column, or a transistor 5 for reset, makes potential of a SEL signal line 7 or a RST signal line 8 which are respectively connected with the transistors high. Moreover, the holding circuit H<SB>j</SB>makes another end of the TG signal line 6 in an open condition when the potential of the TG signal line 6 is high. COPYRIGHT: (C)2006,JPO&NCIPI
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