发明名称 SOLID IMAGING DEVICE, AND CONTROL METHOD OF SOLID IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To make electric charge which leaks from a photoelectric conversion element of each pixel small and to make the difference of leak amounts of electric charge from the photoelectric conversion elements between pixels small in a solid imaging device using CMOS image sensors. SOLUTION: An end of a TG signal line 6 to which a transistor 2 for transfer of pixels P<SB>j1</SB>, P<SB>jn</SB>of the same column is connected, is connected to a driver D<SB>j</SB>, and another end is connected to a holding circuit H<SB>j</SB>. The holding circuit H<SB>j</SB>shorts another end of the TG signal line 6 with ground potential when a transistor 4 for selection of pixels P<SB>j1</SB>, P<SB>jn</SB>of the same column, or a transistor 5 for reset, makes potential of a SEL signal line 7 or a RST signal line 8 which are respectively connected with the transistors high. Moreover, the holding circuit H<SB>j</SB>makes another end of the TG signal line 6 in an open condition when the potential of the TG signal line 6 is high. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006020174(A) 申请公布日期 2006.01.19
申请号 JP20040197367 申请日期 2004.07.02
申请人 FUJITSU LTD 发明人 HIGUCHI TAKESHI;FUNAKOSHI JUN;YAMAGATA SEIJI;MIZUGUCHI TOSHITAKA;YAMAMOTO KATSUYOSHI
分类号 H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/3745;H04N5/376 主分类号 H01L27/146
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