| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves reliability by a structure where a damage is not given to wiring at the time of air gap formation, and by removing the insulating layers between wires, as much as possible, so as to attain full low dielectric. SOLUTION: The semiconductor device is provided with a wiring layer which forms insulator layers 5 and 9, whose wet etching resistance is higher than an insulating layer 6 in the upper and lower layers of the insulating layer 6 in which two or more wiring are formed in the inside; an insulating layer 7 formed in the circumference so as to cover the wiring consisting of a material whose wet etching resistance is higher than the insulating layer 6; and an air gap 12 constituted by etching clearance for removing selectively an insulating layer 4 between the wiring surrounded by the insulating layers 5 and 9 of the upper and lower layers and the insulating layer 7, based on the difference in the etching resistance of the insulating layers 5 and 9 of the upper and lower layers and the insulating layer 7 and the insulating layer 4 formed in the inside. COPYRIGHT: (C)2006,JPO&NCIPI
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