发明名称 Method of manufacturing semiconductor laser element
摘要 A method of manufacturing a semiconductor laser element having an enhanced yield ratio is provided. The semiconductor laser element having a cladding layer, an intermediate layer, and a capping layer is manufactured as follows. At the laminating step, a plurality of lamination layers are laminated in a laminating direction. Subsequently, at protruding step, a cladding layer, a capping layer and a precursor of an intermediate layer are formed so that widthwise lengths of the cladding layer and the capping layer become shorter or uniform in the laminating direction, and so that the precursor of an intermediate layer protrudes widthwise from the cladding layer and the capping layer. At removing step, an protrusion of the precursor of the intermediate layer is removed.
申请公布号 US2006014311(A1) 申请公布日期 2006.01.19
申请号 US20050183296 申请日期 2005.07.14
申请人 SHARP KABUSHIKI KAISHA 发明人 KAWATO SHINICHI
分类号 H01L21/00 主分类号 H01L21/00
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