METHOD OF FORMING A NANOCLUSTER CHARGE STORAGE DEVICE

摘要

In one embodiment, a method of forming a nanocluster charge storage device is provided. A first region (26 & 30) of a semiconductor device (10) is identified for locating one or more non-charge storage devices. A second region (28) of the semiconductor device is identified for locating one or more charge storage devices. A gate oxide (22) to be used as a gate insulator of the one or more non-charge storage devices is formed in the first region (26 & 30) of the semiconductor device, and a nanocluster charge storage layer is subsequently formed in the second region (28) of the semiconductor device.