| 摘要 |
PROBLEM TO BE SOLVED: To obtain a system-in-display of high function and multi-function at a low cost. SOLUTION: High performance and high reliability of a low temperature polysilicon thin film transistor are realized by terminating defect of a polycrystalline silicon interface constituting a gate oxide film/channel by fluorine. To maximize its effect, a material wherein scattering by potential barrier of grain boundary is not dominant, that is, an almost band-like crystalline thin film SPSI wherein grain boundary dividing a channel is little is used in the channel of the thin film transistor. Consequently, it is possible to realize a thin film transistor which has both sharp transmission characteristic and good hot carrier resistance and realizes both high performance and high reliability, to form various circuits which operate rapidly by a low voltage on the same glass substrate as a picture element, and to obtain a high function/multi-function system-in-display at a low cost. COPYRIGHT: (C)2006,JPO&NCIPI |
