发明名称 Input stage circuit of semiconductor device
摘要 Disclosed is an input stage circuit of a semiconductor device which is effective for preventing a reference voltage fluctuation. The input stage circuit of the semiconductor memory device includes: a reference voltage input pin connected to an external reference voltage terminal, wherein the reference voltage is used for determining a digital value; a reference voltage line for applying the reference voltage from the reference voltage input pin; a first drive voltage line for applying a first drive voltage into the semiconductor device; a second drive voltage line for applying a second drive voltage into the semiconductor device; a first coupler for coupling the reference voltage line with the first drive voltage line; and a second coupler for coupling the reference voltage line with the second drive voltage line.
申请公布号 US2006012419(A1) 申请公布日期 2006.01.19
申请号 US20040020246 申请日期 2004.12.27
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 KIM KWAN-WEON
分类号 H03B1/00 主分类号 H03B1/00
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