发明名称 |
Magnetic memory device having a plurality of magneto-resistance effect elements arranged in a matrix form and method for manufacturing the same |
摘要 |
A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.
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申请公布号 |
US2006013050(A1) |
申请公布日期 |
2006.01.19 |
申请号 |
US20050232017 |
申请日期 |
2005.09.22 |
申请人 |
FUKUZUMI YOSHIAKI |
发明人 |
FUKUZUMI YOSHIAKI |
分类号 |
G11C7/00;G11C11/15;H01L21/8246;H01L27/105;H01L27/22 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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