发明名称 Nucleation and deposition of platinum group metal films using ultraviolet irradiation
摘要 A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.
申请公布号 US2006014367(A1) 申请公布日期 2006.01.19
申请号 US20050167074 申请日期 2005.06.27
申请人 MICRON TECHNOLOGY, INC. 发明人 MARSH EUGENE P.
分类号 H01L21/28;C23C16/48;H01L21/02;H01L21/285;H01L21/44;H01L21/768 主分类号 H01L21/28
代理机构 代理人
主权项
地址