| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change storage element for reducing a write current required for the phase change of a phase change film, and to provide a method for manufacturing the phase change storage element. <P>SOLUTION: The phase change storage element comprises a first insulating film that is formed on a semiconductor substrate having a lower structure and has first and second contact holes for exposing a prescribed part of a substrate; a conductive plug for burying the first contact hole; a bit line that is formed on the first insulating film and buries the second contact hole; a second insulating film formed on the first insulating film; an upper electrode, a phase change film pattern, and a hard mask film sequentially formed on the second insulating film; a third insulating film that is formed on the second insulating film and exposes the surface of the upper part of the hard mask film; a third contact hole that penetrates the inside of the third and second insulating films for formation and exposes the conductive plug; a fourth contact hole that is formed on the hard mask film and exposes the phase change film pattern; first and second lower electrode contacts for burying the third and fourth contact holes; and a lower electrode that is formed on the third insulating film and connects the first and second lower electrode contacts. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
