GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME,申请号WO2004US27657-传众专利搜索

发明名称	GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME
摘要	The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (<i
申请公布号	WO2005022639(A3)	申请公布日期	2006.01.19
申请号	WO2004US27657	申请日期	2004.08.25
申请人	NITRONEX CORPORATION;WEEKS, T., WARREN;LINTHICUM, KEVIN, J.	发明人	WEEKS, T., WARREN;LINTHICUM, KEVIN, J.
分类号	H01L21/28;H01L21/338;H01L29/06;H01L29/20;H01L29/417;H01L29/47;H01L29/80;H01L29/812;H01L29/861;H01L29/872;H01L33/00;H01L33/20;H01L33/32;H01L33/38;H01L47/02;H01S5/343	主分类号	H01L21/28
代理机构		代理人
主权项
地址