MAGNETRON SPUTTERING DEVICE MAKING MAGNETIC FLUX ARRANGEMENT (BALANCED TYPE/UNBALANCED TYPE) SWITCHABLE AND FILM FORMING METHOD FOR INORGANIC THIN FILM MATERIAL USING THIS DEVICE, AND DUAL-TYPE MAGNETRON SPUTTERING DEVICE AND FILM FORMING METHOD FOR

摘要

An object exhibiting ferromagnetism at room temperature is detachably installed in the vicinity of the material target holding surface of a sputtering cathode having a balanced type magnetic flux arrangement to make a magnetic flux magnetic field arrangement at a magnetron cathode simply switchable to a balanced type or a balanced type. In addition, two magnetrons are provided so that an angle formed by the extension lines of their respective material holding surfaces is set to 160-20°, preferably 160-70°, and an active region is concentrated on a substrate to enable low-temperature, high-speed film forming. Further, a magnetron designed for an unbalanced type magnetic flux magnetic field is selected, and at least two mixed rare gases are used, thereby enabling lower-temperature, higher-speed film forming.