| 摘要 |
<P>PROBLEM TO BE SOLVED: To disclose a phase change storage element for reducing the amount of current required for the phase change of a phase change film, and a method for manufacturing the phase change storage element. <P>SOLUTION: The phase change storage element comprises a first insulating film that is formed on a semiconductor substrate having a prescribed lower structure and has a first contact hole for exposing the prescribed part of the substrate; a conductive plug for burying the first contact hole; a second insulating film that is formed on the first insulating film and has a second contact hole for exposing one portion of the substrate between the conductive plugs; a bit line that is formed on the second insulating film and buries the second contact hole; a third insulating film, a fourth insulating film, and a nitriding film that are successively formed on the second insulating film and have a third contact hole for exposing the conductive plugs; a lower electrode for burying the third contact hole; an opening for exposing the prescribed section of the third insulating film between the lower electrodes; a cavity section for exposing one portion of a lower electrode sidewall while being connected to the opening; a phase change film pattern that buries the opening and cavity sections and is connected to one side of the lower electrode; and an upper electrode formed on the phase change film pattern. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
