发明名称 |
MTJ patterning using free layer wet etching and lift off techniques |
摘要 |
Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices, wherein the second magnetic layer or free layer of a magnetic stack may be patterned using a wet etch technique. A cap layer is formed over the free layer after the free layer is patterned. The cap layer is formed using lift-off techniques. To form the cap layer, resist layers are deposited and patterned, and material layers are deposited over the resist layers. Portions of the material layers are removed when the resist is stripped.
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申请公布号 |
US2006014305(A1) |
申请公布日期 |
2006.01.19 |
申请号 |
US20040890767 |
申请日期 |
2004.07.14 |
申请人 |
LEE GILL Y;O'SULLIVAN EUGENE |
发明人 |
LEE GILL Y.;O'SULLIVAN EUGENE |
分类号 |
H01L21/00;G11C11/14;G11C11/15 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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