| 摘要 |
An accumulation-mode field effect transistor includes a plurality of gates and a semiconductor region having a channel region adjacent to but insulated from each of the plurality of gates. The semiconductor region further includes a conduction region wherein the channel regions and the conduction region are of a first conductivity type. The transistor further includes a drain terminal and a source terminal configured so that when the accumulation-mode field effect transistor is in the on state a current flows from the drain terminal to the source terminal through the conduction region and the channel regions. A number of charge balancing structures are integrated with the semiconductor region so as to extend parallel to the current flow. In a blocking state, the charge balancing structures influence an electric field in the conduction region so as to increase the blocking capability of the accumulation-mode field effect transistor.
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