| 摘要 |
Integrated circuits can include an integrated capacitor with a metal alloy layer. Methods for forming such integrated circuits can include providing a substrate, forming a first electrode including depositing a metal alloy layer having a first surface and an exposed second surface, etching the exposed second surface of the metal alloy layer thereby increasing the surface roughness of the second surface of the metal alloy layer, forming a capacitor dielectric on the first electrode and forming a second electrode on the capacitor dielectric. By providing a metal alloy layer and etching the second surface of the metal alloy layer, an increased capacitance of the integrated capacitor is achieved.
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