| 摘要 |
A semiconductor device includes a variable capacitance diode. The variable capacitance diode includes a semiconductor substrate having a circuit area; a plurality of diffusion areas formed on the semiconductor substrate in the circuit area; a gate oxide layer formed in a gate area between the diffusion areas; a control electrode formed on the gate oxide layer; an insulating layer formed on the diffusion areas and the control electrode; a first contact formed in the insulating layer and passing through the insulating layer; a first wiring pattern electrically connected to the diffusion areas through the first contact; a second contact formed in the insulating layer and passing through the insulating layer; and a second wiring layer electrically connected to the control electrode through the second contact. The gate oxide layer has a first area with a first thickness and a second area with a second thickness different from the first thickness.
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