发明名称 Two-dimensional silicon controlled rectifier
摘要 A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area) within a given SCR area, i.e., effectively increasing the SCR width. Increasing the physical SCR area, increases the current handling capabilities of the SCR.
申请公布号 US2006011939(A1) 申请公布日期 2006.01.19
申请号 US20050176975 申请日期 2005.07.07
申请人 MOHN RUSSELL;TRINH CONG-SON;JOZWIAK PHILLIP C;ARMER JOHN;MERGENS MARKUS P J 发明人 MOHN RUSSELL;TRINH CONG-SON;JOZWIAK PHILLIP C.;ARMER JOHN;MERGENS MARKUS P.J.
分类号 H01L29/32 主分类号 H01L29/32
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