| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for uniformly etching a photomask. <P>SOLUTION: The method for etching a photomask includes a step of providing a processing chamber, having a substrate supporting pedestal adapted to receive a substrate for photomask on the top part. A shield for ion radicals is arranged on the pedestal. A substrate is placed on the pedestal below the shield for ion radical. A processing gas is introduced into the processing chamber, and a plasma is formed from the processing gas. The substrate is mainly etched by using radicals that pass through the shield. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
