发明名称 Capacitor layout orientation
摘要 The disclosed embodiments relate to a plurality of capacitive memory elements disposed on a substrate. The substrate may comprise a processor, a memory device or other integrated circuit device. The capacitive memory elements may have a generally oblong shape and may be capacitive elements. The capacitive memory elements may be disposed in a slanted orientation. The capacitive memory elements may be disposed in a non-orthogonal orientation. The capacitive memory elements may be disposed so that an axis through one of the plurality of capacitive memory elements is not generally parallel with an edge of the substrate. The axis may not be generally perpendicular with an orthogonal edge of the substrate. The plurality of capacitive memory elements may be arranged in a first row and a second row so that an axis through one of the plurality of capacitive memory elements located in the first row does not form an axis of any capacitive memory element in the second row.
申请公布号 US2006011992(A1) 申请公布日期 2006.01.19
申请号 US20050218996 申请日期 2005.09.01
申请人 BAGGENSTOSS BILL 发明人 BAGGENSTOSS BILL
分类号 H01L29/76;G11C11/24;G11C11/404;H01L21/8242;H01L27/02;H01L27/10;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L29/76
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