摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a pattern with high line width accuracy, a method of machining a substrate, and a method of making a device. <P>SOLUTION: The methods perform a resist layer forming step for forming a resist layer 204 on a substrate 205 to be machined, an exposure step for exposing the resist layer 204 with near field light, and a development process for wet-developing the exposed resist layer 204 through the use of an alkaline aqueous solution or organic solvent. In addition, the resist layer 204 is formed of resist whose γ value calculated from a sensitivity curve is 1.6 or larger. <P>COPYRIGHT: (C)2006,JPO&NCIPI |