发明名称 METHODS FOR FORMING RESIST PATTERN, MACHINING SUBSTRATE AND MAKING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a pattern with high line width accuracy, a method of machining a substrate, and a method of making a device. <P>SOLUTION: The methods perform a resist layer forming step for forming a resist layer 204 on a substrate 205 to be machined, an exposure step for exposing the resist layer 204 with near field light, and a development process for wet-developing the exposed resist layer 204 through the use of an alkaline aqueous solution or organic solvent. In addition, the resist layer 204 is formed of resist whose &gamma; value calculated from a sensitivity curve is 1.6 or larger. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006019447(A) 申请公布日期 2006.01.19
申请号 JP20040194821 申请日期 2004.06.30
申请人 CANON INC 发明人 ITO TOSHIKI;MIZUTANI NATSUHIKO;YAMAGUCHI TAKAKO
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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