SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To make high-speed read possible in a semiconductor storage device of virtual grounding wire memory array configuration by suppressing a leakage current through a memory cell adjoining to a read-out target memory cell.

SOLUTION: The semiconductor storage device is equipped with; a readout circuit 3 which detects size of a memory cell current which flows in a readout target memory cell by selecting a pair of selection bit lines each connecting to the source/drain the of read-out target memory cell and impressing a prescribed voltage between the bit lines concerned; and a counter potential generation circuit 4 which generates a counter potential Vn2 which changes in the same direction as the change of a middle node potential Vn1 according to the size of a memory cell current based on a middle node potential Vn1 of a middle node N1 on a current path which supplies a memory cell current in a readout circuit 3 which serves as the potential higher than any potential of a pair of selection bit lines, and whose fluctuation band is larger than that of the middle node potential Vn1. The counter potential Vn2 is supplied to non-selection bit line which adjoins high potential side of a pair of selected bit lines.

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