| 摘要 |
PROBLEM TO BE SOLVED: To provide an amplification type solid-state imaging device in which crosstalk is reduced. SOLUTION: The pixel of the amplification type solid-state imaging device has a first conductivity-type charge storage region for storing signal charge, a second conductivity-type semiconductor region adjacent to at least the back side of a semiconductor substrate out of the outer periphery of the charge storage region, and an amplifier. The amplifier includes a charge detection region to which the charge stored in the charge storage region is transferred and outputs a pixel signal according to the charge amount in the charge detection region. In the semiconductor region, a second conductivity-type charge mixing prevention region opposes at least part of the charge storage region via part of the semiconductor region, and is formed on the back side of the semiconductor substrate rather than in the charge storage region. Having a net average impurity concentration higher than that in the semiconductor region, the charge mixing prevention region serves as a barrier against signal charge, inhibiting charges that flows in from adjacent pixels from mixing into the charge storage region. As a result, crosstalks are reduced. COPYRIGHT: (C)2006,JPO&NCIPI
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