| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which improves light emitting efficiency and can reduce a threshold value of laser oscillation, and to provide a method of manufacturing the semiconductor laser. SOLUTION: The semiconductor laser includes a p-type semiconductor and an n-type semiconductor arranged at the part of a layer made of an intrinsic semiconductor. The two semiconductors supply electron and hole to a confinement layer from a direction perpendicular to the laminating direction of the confinement layer, and provide at the position which does not disturb the light emitted from the confinement layer to laser oscillate and emit in the laminating direction of the intrinsic semiconductor layer. The p-type semiconductor and the n-type semiconductor are arranged at the position sufficient to supply the hole or the electron to the confinement layer. The hole is supplied from the p-type semiconductor part, and the electron is supplied from the n-type semiconductor part to the confinement layer. Consequently, the hole and the electron are recombined by the confinement layer and the light can bee emitted. COPYRIGHT: (C)2006,JPO&NCIPI
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