发明名称 NITRIDE SINGLE CRYSTAL AND ITS PRODUCING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a large nitride single crystal and a method for producing the same. SOLUTION: The method for producing the nitride single crystal comprises forming a substance transport medium layer 12 containing a compound of a rare earth element on the surface of a nitride crystal 11 and growing the nitride single crystal 14 on a seed crystal 13 by bringing the seed crystal 13 into contact with the substance transport medium layer 12. In the method for producing the nitride single crystal, the substance transport medium layer 12 contains at least one kind selected from the group of aluminum compounds, alkaline earth metal compounds, and transition metal compounds, and one compound of rare earth elements. Thereby, the nitride single crystal having a crystal diameter of≥10 mm can be obtained. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006016252(A) 申请公布日期 2006.01.19
申请号 JP20040195665 申请日期 2004.07.01
申请人 SUMITOMO ELECTRIC IND LTD 发明人 UEMATSU KOJI;NAKAHATA SEIJI
分类号 C30B27/02;C30B29/38 主分类号 C30B27/02
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