| 摘要 |
<p>An implant (18) is performed in the P channel regions, while masking the N channel regions, to deeply amorphize a layer (16) at the surface of a semiconductor layer (12). After this amphorization step, germanium is implanted into the amorphized layer. The germanium (20) is implanted to a depth that is less than the amorphization depth. This germanium-doped layer (22) that is amorphous is heated so that it is recrystallized. The recrystallization results in a semiconductor layer (24) that is silicon germanium (SiGe) and compressive. P channel transistors (25) are then formed in this recrystallized semiconductor layer (24). This process can also be applied to the N channel (26) side while masking the P channel side. In such case the implant would preferably be carbon instead of germanium.</p> |
