SEMICONDUCTOR MEMORY, ITS MANUFACTURING METHOD, AND PORTABLE ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory composed of field effect transistors easy to make miniaturized, comprising memory function structures having a function for holding the charge or polarization.

SOLUTION: A single gate electrode 217 is formed on a semiconductor substrate 211 through a gate insulation film 214. A first and second memory function structures 261, 262 are formed at both sides of the gate electrode 217. A p-type channel region 472 is formed on the surface of the substrate 211 at the gate electrode 217 side and a first and second n-type diffused regions 212, 213 are formed at both sides of the channel region 472 which is composed of an offset region 401 located beneath the first and second memory function structures 261, 262 and a gate electrode lower region 402 located beneath the gate electrode 217. The concentration of an impurity for giving a p-type conductivity to the offset region 401 is substantially lower than that of an impurity for giving a p-type conductivity to the gate electrode lower region 402.

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