| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the flatting method of a metal film formed on a semiconductor wafer capable of polishing the metal film even under a low polishing pressure condition at a high speed, and capable of suppressing the occurrence of polishing surface defects such as scratches and dishing in a process flatting the metal film formed on the semiconductor wafer and a manufacturing method of the semiconductor wafer. <P>SOLUTION: The method is for chemically and mechanically polishing the metal film formed on the semiconductor wafer using such a metal polishing composition that polyoxo acid, an anionic surface-active agent and water are contained by using a chemical and mechanical device provided with a polishing pad. In the method, the polishing pad is provided with holes for supplying the metal polishing composition onto the polishing pad surface, and the chemical and mechanical polishing device is provided with a device for supplying the metal polishing composition onto the polishing pad surface through the holes of the polishing pad. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
