摘要 |
PROBLEM TO BE SOLVED: To provide a method of thermally treating a single crystal in which a single crystal with excellent quality is obtained in a short time and with less power consumption, and a method of producing a single crystal using the same. SOLUTION: Provided is the method of thermally treating a single crystal that has been grown by a single crystal pulling method, wherein when lowering the temperature from a maximum retention temperature T<SB>max</SB>to the room temperature, provided that the temperature lowering rate outside the temperature range from 1,200°C to 800°C is x and the mean temperature lowering rate within the temperature range from 1,200°C to 800°C is x<SB>1,200-800</SB>, the relationship x<SB>1,200-800</SB><x should be satisfied. COPYRIGHT: (C)2006,JPO&NCIPI
|