发明名称 METHOD OF THERMALLY TREATING SINGLE CRYSTAL AND METHOD OF PRODUCING SINGLE CRYSTAL USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of thermally treating a single crystal in which a single crystal with excellent quality is obtained in a short time and with less power consumption, and a method of producing a single crystal using the same. SOLUTION: Provided is the method of thermally treating a single crystal that has been grown by a single crystal pulling method, wherein when lowering the temperature from a maximum retention temperature T<SB>max</SB>to the room temperature, provided that the temperature lowering rate outside the temperature range from 1,200°C to 800°C is x and the mean temperature lowering rate within the temperature range from 1,200°C to 800°C is x<SB>1,200-800</SB>, the relationship x<SB>1,200-800</SB><x should be satisfied. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006016254(A) 申请公布日期 2006.01.19
申请号 JP20040195785 申请日期 2004.07.01
申请人 TDK CORP 发明人 KAWASAKI KATSUMI
分类号 C30B33/02;C30B29/28;C30B29/34 主分类号 C30B33/02
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