发明名称 INSULATING FILM RAW MATERIAL COMPOSITION FOR CVD INCLUDING CYCLIC SILOXANE AND METHOD FOR FORMING INSULATING FILM USING THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain an insulating film which assures both a low dielectric constant and high mechanical strength by utiling an insulating film raw material composition for CVD including a cyclic siloxane. SOLUTION: An insulating film raw material composition for CVD includes the cyclic siloxane having a substitutional group selected from a group including ethyl group, a vinyl group, an ethynyl group, a propyl group, an aryl group, a buthyl group or a phenyl group. Gas is generated by vaporizing or sublimating the insulating film raw material composition for CVD. The gas is introduced into a reaction vessel wherein a base material is stationarily placed, and turned to plasma to form an insulating film on the base substrate. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006019377(A) 申请公布日期 2006.01.19
申请号 JP20040193614 申请日期 2004.06.30
申请人 MITSUI CHEMICALS INC 发明人 KURASAWA TATSUHIRO;KAI TASUKU
分类号 H01L21/312;C08G83/00;C23C16/32;H01L21/316;H01L21/768;H01L23/522 主分类号 H01L21/312
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