| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a MIM capacitor having a large capacity and requiring a small occupation area without the provision of an additional lower electrode forming process. SOLUTION: To a second insulating film 6 in an MIM capacitor forming region A, a MIM capacitor 15 is formed including a lower electrode 12 formed of a barrier film such as Ta/TaN, a capacity insulating film 13 formed of a metal oxide film such as Al<SB>2</SB>O<SB>3</SB>, and an upper electrode 14 formed of a barrier film such as TiN. Meanwhile, the second insulating film 6 of a wiring forming region B has a second wiring W2 provided in the upper part, a second plug P2 provided in the lower part are integrated, and second layer wiring 10b integrally formed of a barrier film 8b, and a conductive film 9b. The lower electrode 12 in the MIM capacitor 15 and the barrier film 8b of the second layer wiring 10b is simultaneously formed using a common barrier film. COPYRIGHT: (C)2006,JPO&NCIPI
|
