METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device that includes a disordered portion, the method comprising depositing a disordering-enhancing film (8) on a portion corresponding to a window structure (14) area, depositing a protective film (9) at least on portions other than the window structure (14) portion by a catalytic CVD method, and disordering the window structure (14) by a thermal treatment. Accordingly, a semiconductor device such as a semiconductor laser device in which only a portion to be partially disordered such as a portion to be a window structure is disordered, with no adverse effect on the other potions not to be disordered. The semiconductor device fabricated using this method shows high output power, long lifetime, and high reliability.