发明名称 |
SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME |
摘要 |
<p>In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO 2 from being formed.</p> |
申请公布号 |
EP1617483(A1) |
申请公布日期 |
2006.01.18 |
申请号 |
EP20040724878 |
申请日期 |
2004.03.31 |
申请人 |
TOKYO ELECTRON LIMITED;OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO;TERAMOTO, AKINOBU;WAKAMATSU, HIDETOSHI;KOBAYASHI, YASUO |
分类号 |
H01L21/04;H01L21/28;H01L21/318;H01L29/51;H01L29/78;(IPC1-7):H01L29/78;H01L21/336 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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