摘要 |
Micro-electro-mechanical structure formed by a substrate (41) of semiconductor material and a suspended mass (10, 20) extending above the substrate (41) and separated therefrom by an air gap (55). An insulating region (23, 24) of a first electrically insulating material extends through the suspended mass (10, 20) and divides it into at least one first electrically insulated suspended region and one second electrically insulated suspended region (10a, 10b, 20a, 20b). A plug element (46) of a second electrically insulating material different from the first electrically insulating material is formed underneath the insulating region (23, 24) and constitutes a barrier between the insulating region and the air gap (55) for preventing removal of the insulating region during fabrication, when an etching agent is used for removing a sacrificial layer and forming the air gap. |