High frequency transistor having an impedance transforming network

摘要

A common emitter high frequency amplifier that has a larger gain than that of a classic common emitter amplifier using the same components is disclosed. Moreover, the gain does not depend strongly from the parasitic inductance L E , thus a smaller layout may be used. The known common emitter amplifiers tends to maximize the base voltage. By contrast, this amplifier is realized such to maximize the base-emitter voltage for having the largest possible gain. This objective is reached by connecting a matching capacitor between the high frequency input node of the amplifier and the emitter of the transistor.