| 摘要 |
A contact hole fabrication method for semiconductor device includes forming a dielectric layer on a semiconductor substrate, forming an antireflective layer on the dielectric layer, forming an amine source layer on the antireflective layer, forming a photoresist layer on the amine source layer, forming a first hole pattern having a T profile and afooting profile by exposing and developing the photoresist layer, forming a second hole pattern in which the profiles are changed by reflowing the photoresist layer, and forming a contact hole by selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask.
|
