发明名称 |
Pressure-welded semiconductor device |
摘要 |
In a pressure-welded semiconductor device where at least one semiconductor element is disposed inside a casing, a buffer conductive layer including conductive carbons is disposed at pressure-welded portions between first casing-side electrodes and element-side electrodes disposed on a first main surface and at pressure-welded portions between second casing-side electrodes and element-side electrodes disposed on a second main surface.
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申请公布号 |
US6987320(B2) |
申请公布日期 |
2006.01.17 |
申请号 |
US20030659289 |
申请日期 |
2003.09.11 |
申请人 |
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO |
发明人 |
MIYACHI YUKIO;OKAMOTO ATSUTO |
分类号 |
B82B1/00;H01L23/48;H01L21/52;H01L21/60;H01L21/603;H01L23/373;H01L23/473;H01L23/498;H01L23/52;H01L29/40;H01L29/739;H01L29/78;H02H3/00 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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