发明名称 |
Method for forming crystalline semiconductor film and apparatus for forming the same |
摘要 |
The invention is directed to a countermeasure against a local amorphous region observed as an eddy pattern on a thermally crystallized crystalline silicon film. The local amorphous region is thought to result from a deficiently formed ultra-thin silicon oxide film by ozone water treatment, which causes a local phenomenon of repelling a catalyst element solution during spin coating. This inhibits a uniform addition of a catalyst element. A relationship between an ozone concentration of ozone water and a wait time between the ozone water treatment and the subsequent step of adding the catalyst element is deduced and used for planning the countermeasure against the local amorphous region.
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申请公布号 |
US6987036(B2) |
申请公布日期 |
2006.01.17 |
申请号 |
US20020209243 |
申请日期 |
2002.08.01 |
申请人 |
SHARP KABUSHIKI-KU KAISHA |
发明人 |
HAMATANI TOSHIJI;NAKAZAWA MISAKO;MAKITA NAOKI |
分类号 |
H01L21/84;C30B1/02;H01L21/20;H01L21/336;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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