发明名称 |
Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus |
摘要 |
A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
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申请公布号 |
US6987035(B2) |
申请公布日期 |
2006.01.17 |
申请号 |
US20040857941 |
申请日期 |
2004.06.02 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO.,LTD. |
发明人 |
YAMAMOTO YOSHITAKA;NISHITANI MIKIHIKO;HIRAMATSU MASATO;JYUMONJI MASAYUKI;KIMURA YOSHINOBU |
分类号 |
G02F1/1345;H01L21/00;B23K26/00;G02F1/1368;H01L21/02;H01L21/20;H01L21/268;H01L21/324;H01L21/335;H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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